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Switching Diodes
MA3X198 (MA198)
Silicon epitaxial planar type
Unit: mm
For wave detection Features
* Two elements contained in one package, allowing high-density mounting * Soft recovery characteristic (trr = 100 ns)
1
0.40+0.10 -0.05 3 1.50+0.25 -0.05 2.8+0.2 -0.3
0.16+0.10 -0.06
2 (0.65)
(0.95) (0.95) 1.90.1 2.90+0.20 -0.05
Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) *: t = 1 s Single Series Single Series Single Series Tj Tstg IFSM IFRM Symbol VR VRRM IF(AV) Rating 40 40 100 75 225 170 500 325 150 -55 to +150 C C mA mA Unit V V mA
10 1.1+0.2 -0.1 1.1+0.3 -0.1
0 to 0.1
EIAJ: SC-59
1: Anode 1 2: Cathode 2 3: Cathode 1 Anode 2 Mini3-G1 Package
Marking Symbol: M2F Internal Connection
3
Electrical Characteristics Ta = 25C 3C
Parameter Forward voltage Symbol VF1 VF2 Reverse current Terminal capacitance Reverse recovery time* IR Ct trr IF = 100 A IR = 100 mA VR = 40 V VR = 6 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 IR, RL = 100 Conditions Min 0.65
1
2
Typ
Max 0.72 1.2 10
Unit V V nA pF ns
1.0
2.0 100
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 10 MHz. 3. *: trr measurement circuit
Bias Application Unit (N-50BU) tr 10% Input Pulse tp t IF trr t Irr = 0.1 IR IF = 10 mA VR = 6 V RL = 100 Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Wave Form Analyzer (SAS-8130) Ri = 50
90% tp = 2 s tr = 0.35 ns = 0.05
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2005 SKF00041DED
0.40.2
5
1
MA3X198
I F VF
103 102
IR VR
1.6
VF Ta
102
Forward current IF (mA)
Forward voltage VF (V)
Reverse current IR (nA)
10
Ta = 150C
1.2 IF = 100 mA 0.8 10 mA 3 mA 0.4
10 Ta = 150C 1 100C 25C - 20C
100C 1 25C
10 -1
10 -1
10 -2
0
0.2
0.4
0.6
0.8
1.0
1.2
10 -2
0
10
20
30
40
50
60
0 -40
0
40
80
120
160
200
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
IR T a
102 2.4
Ct VR
103
IF(surge) tW
f = 1 MHz Ta = 25C
Ta = 25C
IF(surge) tW
Terminal capacitance Ct (pF)
2.0
Forward surge current IF(surge) (A)
Reverse current IR (nA)
10
VR = 30 V 6V
102
Non repetitive
1.6
1
1V
1.2
10
0.8
10 -1
1
0.4
10 -2 -40
0 0 40 80 120 160 200
0
10
20
30
40
50
60
10 -1
10 -1
1
10
Ambient temperature Ta (C)
Reverse voltage VR (V)
Pulse width tW (ms)
2
SKF00041DED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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